Dislocation-disclination transformations and the reverse Hall-Petch effect in nanocrystalline materials

被引：12
|
作者：
Kolesnikova, A. L.
Ovid'ko, I. A.
Romanov, A. E. [1 ]
机构：
[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
62; 25; +g; 61; 72; Lk;
D O I：
10.1134/S1063785007080056
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A relay-race dislocation-disclination model of plastic shear development in nanocrystalline materials is proposed, which is based on the mechanism of switching between translational and rotational deformation modes. The dependence of the external deforming stress on the grain size is calculated. It is shown that the switching from the translational to rotational deformation mode and back explains the reverse Hall-Petch effect in nanocrystalline materials.
引用
收藏
页码：641 / 644
页数：4
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