Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generation

被引：0
|
作者：
Pan, CL [1 ]
Liu, TA [1 ]
Lin, GR [1 ]
Tani, M [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源：
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 | 2000年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：179 / 180
页数：2
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