Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generation

被引：0

作者：

Pan, CL ^{[1
]}

Liu, TA ^{[1
]}

Lin, GR ^{[1
]}

Tani, M ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：179 / 180

页数：2

共 42 条

[1] Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications
Pan, CL
1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS, 1999, : 367 - 368
[2] Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors
Lin, GR
Pan, CL
APPLIED PHYSICS LETTERS, 1997, 71 (20) : 2901 - 2903
[3] Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
Liu, TA
Tani, M
Nakajima, M
Hangyo, M
Pan, CL
APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1322 - 1324
[4] Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas
Liu, T. -A.
Chou, R. -H.
Pan, C. -L.
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 95 (04): : 739 - 744
[5] Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas
T.-A. Liu
R.-H. Chou
C.-L. Pan
Applied Physics B, 2009, 95 : 739 - 744
[6] Electrical properties in arsenic-ion-implanted GaAs
Chen, WC
Chang, CS
JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1600 - 1604
[7] Ultrafast response of multi-energy proton-bombarded GaAs photoconductors
G.-R. Lin
C.-L. Pan
Optical and Quantum Electronics, 2000, 32 : 553 - 571
[8] Ultrafast response of multi-energy proton-bombarded GaAs photoconductors
Lin, GR
Pan, CL
OPTICAL AND QUANTUM ELECTRONICS, 2000, 32 (4-5) : 553 - 571
[9] Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs
Lin, GR
Chen, WC
Chang, CS
Chao, SC
Wu, KH
Hsu, TM
Lee, WC
Pan, CL
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) : 1740 - 1748
[10] Gap-Dependent Terahertz Pulses from Mid-Size-Gap Multi-Energy Arsenic-Ion-Implanted GaAs Antennas
Chou, Rone-Hwa
Pan, Ci-Ling
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) : 8419 - 8425

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