Single event upset cross sections at various data rates

被引:40
|
作者
Reed, RA
Carts, MA
Marshall, PW
Marshall, CJ
Buchner, S
LaMacchia, M
Mathes, B
McMorrow, D
机构
[1] SFA INC,LARGO,MD
[2] MOTOROLA GSTG,SCOTTSDALE,AZ
关键词
D O I
10.1109/23.556878
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. We show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency. We also observe non-linear behavior in some complex circuit topologies. Knowledge of the relationship between SEU cross section and frequency is important for estimates of on-orbit SEU rates.
引用
收藏
页码:2862 / 2867
页数:6
相关论文
共 50 条
  • [1] Single event upset cross sections at various data rates
    Reed, R.A.
    Carts, M.A.
    Marshall, P.W.
    Marshall, C.J.
    Buchner, S.
    La Macchia, M.
    Mathes, B.
    McMorrow, D.
    IEEE Transactions on Nuclear Science, 1996, 43 (6 Pt 1) : 2862 - 2867
  • [2] SINGLE EVENT UPSET RATES IN SPACE
    CAMPBELL, A
    MCDONALD, P
    RAY, K
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 1828 - 1835
  • [3] High LET single event upset cross sections for bulk and SOI CMOS SRAMs
    McDaniel, FD
    Doyle, BL
    Vizkelethy, G
    Dodd, PE
    Rossi, P
    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2003, 680 : 355 - 358
  • [4] Single Event Upset rates in the CBC in CMS
    Hall, G.
    Borg, J.
    Uchida, K.
    Jones, L.
    Prydderch, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 978
  • [5] Effects of data rate and transistor size on single event upset cross-sections for InP-based circuits
    Hansen, DL
    Chu, P
    Meyer, SF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 3166 - 3171
  • [6] Study on relations between heavy ions single event upset cross sections and γ accumulated doses
    He, Chao-Hui
    Geng, Bin
    Wang, Yan-Ping
    Peng, Hong-Lun
    Yang, Hai-Liang
    Chen, Xiao-Hua
    Li, Guo-Zheng
    Hedianzixue Yu Tance Jishu/Nuclear Electronics & Detection Technology, 2002, 22 (03):
  • [7] Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections
    Loveless, Thomas Daniel
    Alles, Michael L.
    Ball, Dennis R.
    Warren, Kevin M.
    Massengill, Lloyd W.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3228 - 3233
  • [8] Prediction of low-LET ion induced single event upset cross sections for advanced SRAM
    Zhou, Wanting
    Hu, Jianhao
    Li, Lei
    JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2013, 50 (10) : 979 - 987
  • [9] EFFECTS OF SOLAR FLARES ON SINGLE EVENT UPSET RATES.
    Adams Jr., James H.
    Gelman, Andrew
    IEEE Transactions on Nuclear Science, 1984, NS-31 (06) : 1212 - 1216