Understanding Vulnerabilities in ReRAM Devices for Trust in Semiconductor Designs

被引：0

作者：

Schultz, T. ^{[1
]}

Jha, R. ^{[1
]}

机构：

[1] Univ Cincinnati, Dept Elect Engn & Comp Sci, Cincinnati, OH 45221 USA

来源：

2017 IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON) | 2017年

关键词：

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This paper discusses attack vulnerabilities in Resistive Random Access Memory (ReRAM) devices that can be potentially triggered by Trojan circuits. Systematic experiments were performed on Ru/MgO/Ti/W based ReRAM devices in 1R and 1T1R configurations. Our observations indicate that vulnerabilities in ReRAM include destabilization of filament due to current overshoot, local heating, introduction of parasitic capacitances, and glitches in the source voltages. These studies are critical to design more robust ReRAM devices that are immune to hardware attacks.

引用

页码：338 / 342

页数：5

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