Electronic structure of Fe (0-5 at.%) doped MoO2 thin films studied by resonant photoemission spectroscopy

被引：13

作者：

Prakash, Ram ^{[1
]}

Choudhary, R. J. ^{[1
]}

Phase, D. M. ^{[1
]}

机构：

[1] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 33期

关键词：

D O I：

10.1088/0953-8984/20/33/335225

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structure of pulsed laser-deposited Mo1-xFexO2 (x = 0, 0.02 and 0.05) thin films has been investigated using resonant photoemission spectroscopy near the Mo 4p absorption edge. In all the samples a broad Fano-like resonance peak at similar to 46 eV is observed in the whole area of the valence band, which indicates the contribution of the Mo 4d states in the entire valence band region. The doping of Fe in these films leads to a decrease in Mo 4d states contributing to electronic states at lower binding energy region. In addition to this, we also observe a shoulder at 4.9 eV in the valence band spectra of doped samples. It is proposed that the origin of this shoulder is due to the Fe hybridized states.

引用

页数：4

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