Effect of nitrogen on the temperature dependence of the bandgap energy in GaNAs

被引：0
|
作者：
Suemune, I [1 ]
Uesugi, K [1 ]
Walukiewicz, W [1 ]
机构：
[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600825, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A significant reduction in the temperature dependence of the absorption edge energy in GaNxAs1-x alloys with x <0.04 was observed. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption edge energy.
引用
收藏
页码：1639 / 1640
页数：2
相关论文
共 50 条
  • [41] Excitation Energy and Temperature Dependence of the Phase Coherent Photorefractive Effect
    Kabir, A.
    Wagner, H. P.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [42] Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
    Dept. of Phys. and Msrmt. Technology, Linköping University, S-581 83 Linköping, Sweden
    不详
    Appl Phys Lett, 24 (3781-3783):
  • [43] Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
    Occena, J.
    Jen, T.
    Mitchell, J. W.
    Linhart, W. M.
    Pavelescu, E. -M.
    Kudrawiec, R.
    Wang, Y. Q.
    Goldman, R. S.
    APPLIED PHYSICS LETTERS, 2019, 115 (08)
  • [44] TEMPERATURE DEPENDENCE OF RELAXATION TIME IN NITROGEN
    COTTRELL, TL
    READ, AW
    JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (11): : 2733 - &
  • [45] DIFFUSION OF NITROGEN IN NIOBIUM, WITH SPECIAL REFERENCE TO TEMPERATURE-DEPENDENCE OF ACTIVATION-ENERGY
    OGURTANI, TO
    UYGUR, EM
    TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1972, 13 (06): : 396 - 399
  • [46] TEMPERATURE DEPENDENCE OF ENERGY OF LEED INTENSITY PEAKS AND ITS EFFECT ON SURFACE DEBYE TEMPERATURE
    WOODRUFF, DP
    SEAH, MP
    PHYSICS LETTERS A, 1969, A 30 (04) : 263 - &
  • [47] Temperature dependence of the symmetry energy
    Dean, DJ
    Langanke, K
    Sampaio, JM
    PHYSICAL REVIEW C, 2002, 66 (04):
  • [48] Temperature dependence of sub-bandgap absorption in hydrogenated amorphous silicon
    Sinha, AK
    Agarwal, SC
    SEMICONDUCTOR DEVICES, 1996, 2733 : 614 - 616
  • [49] Temperature dependence of hexagonal-GaN optical properties below the bandgap
    Siozade, L
    Colard, S
    Mihailovic, M
    Leymarie, J
    Vasson, A
    Grandjean, N
    Leroux, M
    Massies, J
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 73 - 77
  • [50] Temperature dependence of fluorescence dynamic behavior of wide-bandgap compounds
    Peng, Lixin
    Qin, Feng
    Wang, Changwen
    Wang, Yongda
    Kou, Meng
    Li, Leipeng
    Zhang, Zhiguo
    OPTICS LETTERS, 2022, 47 (16) : 4243 - 4246
12345