Effect of nitrogen on the temperature dependence of the bandgap energy in GaNAs

被引：0
|
作者：
Suemune, I [1 ]
Uesugi, K [1 ]
Walukiewicz, W [1 ]
机构：
[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600825, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A significant reduction in the temperature dependence of the absorption edge energy in GaNxAs1-x alloys with x <0.04 was observed. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption edge energy.
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页码：1639 / 1640
页数：2
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