Epitaxy of Pt thin films on (001)MgO .1. Interface energetics and misfit accommodation

被引：38
|
作者：
McIntyre, PC [1 ]
Maggiore, CJ [1 ]
Nastasi, M [1 ]
机构：
[1] LOS ALAMOS NATL LAB,DIV MAT SCI & TECHNOL,LOS ALAMOS,NM 87545
来源：
ACTA MATERIALIA | 1997年 / 45卷 / 02期
基金：
美国能源部;
关键词：
D O I：
10.1016/S1359-6454(96)00182-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Theoretical and experimental results on film/substrate interface energetics and misfit accommodation in Pt thin films on (001) MgO are reported. Two epitaxial orientations were observed in Pt films deposited on to (001) MgO substrates by electron beam evaporation: [110](001)Pt//[110](001) MgO and [110](111)Pt//[110](001) MgO. O-lattice calculations were used to predict film/substrate interface structures and relative interfacial energies for these two epitaxial Pt film orientations. The interfacial misfit dislocation structure was characterized by weak beam transmission electron microscopy. Good agreement was found among the calculated relative interface energies, reports in the literature, and the present experimental data. Copyright (C) 1997 Acta Metallurgica Inc.
引用
收藏
页码：869 / 878
页数：10
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