A compact D-band monolithic APDP-based sub-harmonic mixer

被引：3

作者：

Zhang, Shengzhou ^{[1
,2
,3
]}

Sun, Lingling ^{[1
,3
]}

Wang, Xiang ^{[1
]}

Wen, Jincai ^{[1
,3
]}

Liu, Jun ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China

[2] 41st Inst China Elect Technol Grp Corp, Qingdao 266555, Peoples R China

[3] Zhejiang Univ, Inst VLSI Design, Hangzhou 310027, Zhejiang, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2017年 / 137卷

基金：

中国国家自然科学基金;

关键词：

D-band sub-harmonic mixer (SHM); Large signal equivalent circuit model; Anti-parallel diode pair (APDP); Monolithic microwave integrated circuit (MMIC); Asymmetric three-transmission-line coupler; HEMT DIODE MIXER; MILLIMETER-WAVE; GHZ; CHIP;

D O I：

10.1016/j.sse.2017.07.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents a compact D-band monolithic sub-harmonic mixer (SHM) with 3 mu m planar hyperabrupt schottky-varactor diodes offered by 70 nm GaAs mHEMT technology. According to empirical equivalent-circuit models, a wide-band large signal equivalent circuit model of the diode is proposed. Based on the extracted model, the mixer is implemented and optimized with a shunt-mounted antiparallel diode pair (APDP) to fulfill the sub-harmonic mixing mechanism. Furthermore, a modified asymmetric three-transmission-line coupler is devised to achieve high-level coupling and minimize the chip size. The measured results show that the conversion gain varies between -13.9 dB and -17.5 dB from 110 GHz to 145 GHz, with a local oscillator (LO) power level of 14 dBm and an intermediate frequency (IF) of 1 GHz. The total chip size including probe GSG pads is 0.57 x 0.68 mm(2). In conclusion, the mixer exhibits outstanding figure-of-merits. (C) 2017 Published by Elsevier Ltd.

引用

页码：62 / 69

页数：8

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