40 Gbit/s low-loss silicon optical modulator based on a pipin diode

被引：94

作者：

Ziebell, Melissa ^{[1
]}

Marris-Morini, Delphine ^{[1
]}

Rasigade, Gilles ^{[1
]}

Fedeli, Jean-Marc ^{[2
]}

Crozat, Paul ^{[1
]}

Cassan, Eric ^{[1
]}

Bouville, David ^{[1
]}

Vivien, Laurent ^{[1
]}

机构：

[1] Univ Paris 11, CNRS UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] CEA, LETI, F-38054 Grenoble 9, France

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 10期

关键词：

CARRIER-DEPLETION; PHOTONICS;

D O I：

10.1364/OE.20.010591

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point. (C)2012 Optical Society of America

引用

页码：10591 / 10596

页数：6

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