Dielectric characteristics of ultra-pure SP adulterated with PANI

被引:0
|
作者
Dong, XB [1 ]
Xu, CX [1 ]
Jiang, XC [1 ]
机构
[1] Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200030, Peoples R China
关键词
D O I
10.1109/ISEIM.2005.193378
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Restraining the impurity ions' conductance under high temperature and preventing movement and accumulating of the ions under high field are concerned much in power silicon devices' surface passivation. More attention should be paid to the high temperature conductance characteristic of silicone resin modified polyester (SP), which is used in power silicon device's surface protection. The resistivity-temperature characteristic of PANI/SP composite, showing a positive resistivity- temperature characteristic or 'Platform effect' in some temperature region, differs significantly from that of pure SP. The temperature threshold from electron conductance to ion conductance increases from 343K to 383K, which has different conductance mechanism. Permitivity and dielectric loss (tan delta) have little difference between SP and PANI-SP composite with certain ratio. Fourier transform infrared spectroscopy (FTIR) shows that the same solidification procedure for PANI/SP composite can be used as that for SP.
引用
收藏
页码:214 / 217
页数:4
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