Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance

被引：5

作者：

Kutty, Karan ^{[1
]}

Yuan, Jiann-Shiun ^{[1
]}

Chen, Shuyu ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 08期

关键词：

D O I：

10.1016/j.microrel.2011.03.027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS cascode class E power amplifier has been designed at 5.2 GHz. Its RF performances such as output and power-added efficiency have been examined in ADS simulation. The layout parasitic is accounted for in the post-layout simulation. Time-dependent drain-source voltage waveforms indicate that the drain of cascode transistor is subject to much higher voltage stress than that of main transistor. Analytical equation of output power including impact of gate-oxide breakdown is developed and compared with RF simulation results. Good agreement between the model predictions and ADS simulation is obtained. The gate-drain breakdown of the cascode transistor decreases the output power and power-added efficiency of the power amplifier significantly when the breakdown resistance is below 1 k Omega. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1302 / 1308

页数：7

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