d An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

被引：1

作者：

Zhang, Ao ^{[1
]}

Gao, Jianjun ^{[1
]}

机构：

[1] East China Normal Univ, Sch Informat & Sci Technol, Shanghai 200241, Peoples R China

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2020年 / 33卷 / 03期

基金：

中国国家自然科学基金;

关键词：

heterojunction bipolar transistor; small signal model; parameter extraction; short-circuit current gain; unilateral power gain; CIRCUIT; PERFORMANCE; PARAMETERS; RESISTANCE; MODEL; HBTS;

D O I：

10.1002/jnm.2545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified -type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.

引用

页数：11

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