Level-set methods for the simulation of epitaxial phenomena

被引：82
|
作者：
Gyure, MF
Ratsch, C
Merriman, B
Caflisch, RE
Osher, S
Zinck, JJ
Vvedensky, DD
机构：
[1] Hughes Res Labs, LLC, Malibu, CA 90265 USA
[2] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA
[3] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England
来源：
PHYSICAL REVIEW E | 1998年 / 58卷 / 06期
关键词：
D O I：
10.1103/PhysRevE.58.R6927
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
We introduce a model for epitaxial phenomena based on the motion of island boundaries, which is described by the level-set method. Our model treats the growing film as a continuum in the lateral direction, but retains atomistic discreteness in the growth direction. An example of such an "island dynamics" model using the level-set method is presented and compared with the corresponding rate equation description. Extensions of our methodology to more general settings are then discussed. [S1063-651X(98)50212-7].
引用
收藏
页码：R6927 / R6930
页数：4
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