The analysis of-ion-selective field-effect transistor operation in chemical sensors

被引：0

作者：

Hotra, Z ^{[1
]}

Holyaka, R ^{[1
]}

Hladun, M ^{[1
]}

Humenuk, I ^{[1
]}

机构：

[1] Natl Univ Lviv Polytech, Dept Elect Devices, Lvov, Ukraine

来源：

OPTOELECTRONIC AND ELECTRONIC SENSORS V | 2002年

关键词：

ISFET; chemical sensor; simulation; substrate effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of "substrate effect" on ISFET characteristics are considered.

引用

页码：104 / 107

页数：4

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