Formation of ideally ordered porous Ga oxide by anodization of pretextured Ga

被引：2
|
作者：
Kondo, Toshiaki [1 ]
Kuroda, Yusuke [1 ]
Shichijo, Tomoki [1 ]
Yanagishita, Takashi [2 ]
Masuda, Hideki [2 ]
机构：
[1] Aichi Univ Technol, Dept Mech Syst Engn, Gamagori, Aichi 4430047, Japan
[2] Tokyo Metropolitan Univ, Dept Appl Chem, Hachioji, Tokyo 1920397, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2022年 / 40卷 / 01期
关键词：
GA2O3; ARCHITECTURE;
D O I：
10.1116/6.0001619
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ideally ordered nanohole array of Ga oxide was formed by anodizing pretextured Ga. Prior to anodization, an ideally ordered array of concaves was formed on the Ga surface by nanoimprinting using a metal mold. The anodization of the pretextured Ga was carried out in a phosphoric acid solution. During anodization, each concave acted as a starting point of hole generation, resulting in the formation of the ideally ordered porous Ga oxide. The present process is expected to be applied to fabricate a light energy conversion device, such as a hydrogen formation device.
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页数：3
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