Triple-junction amorphous/microcrystalline silicon solar cells: Towards industrially viable thin film solar technology

被引:12
|
作者
Multone, X. [1 ]
Fesquet, L. [1 ]
Borrello, D. [1 ]
Romang, D. [1 ]
Choong, G. [1 ]
Vallat-Sauvain, E. [1 ]
Charriere, M. [1 ]
Billet, A. [1 ]
Boucher, J. -F. [1 ]
Steinhauser, J. [1 ]
Orhan, J. -B. [1 ]
Monnard, R. [1 ]
Cardoso, J. -P. [1 ]
Charitat, G. [1 ]
Dehbozorgi, B. [1 ]
Guillot, N. [1 ]
Monteduro, G. [1 ]
Marmelo, M. [1 ]
Semenzi, R. [1 ]
Benagli, S. [1 ]
Meier, J. [1 ]
机构
[1] TEL Solar Lab SA, CH-2000 Neuchatel, Switzerland
关键词
Triple junctions; Amorphous silicon; Microcrystalline silicon; MICROCRYSTALLINE SILICON; SURFACE-MORPHOLOGY; TEMPERATURE; GROWTH;
D O I
10.1016/j.solmat.2015.04.038
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The status of the development of triple-junction (amorphous silicon/microcrystalline/microcrystalline silicon) test cells fabricated with up-scalable PECVD processes is given. A first draft of novel rather flat scattering superstrates with an optimized high bandgap amorphous silicon top cell including a carbon-free buffer at the p/i interface is presented. The careful optimization of the interfaces (including suboxide doped layers and buffers) and of the bulk crystallinity of the middle and bottom microcrystalline sub-cells allowed to reach a stabilized efficiency of 13.5 % (after 1000 h light-soaking, internal measurement). Sub-cells individual developments are discussed and their specific integration into the full triple-junction device with its optimization for AM1.5G illumination relying on a partly LED supported solar simulator characterization is presented. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:388 / 395
页数:8
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