Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation

被引：12
|
作者：
Thomidis, C. [1 ]
Barozzi, M. [2 ]
Bersani, M. [2 ]
Ioannou-Sougleridis, V. [3 ]
Vouroutzis, N. Z. [4 ]
Colombeau, B. [1 ]
Skarlatos, D. [5 ]
机构：
[1] Appl Mat Varian Semicond Equipment, Gloucester, MA 01930 USA
[2] Fdn Bruno Kessler, CMM MNF MateC, I-38123 Trento, Italy
[3] NCSR Demokritos, Inst Nanosci & Nanotechnol, Microelect Div, GR-15310 Athens, Greece
[4] Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece
[5] Univ Patras, Dept Phys, GR-26500 Patras, Greece
来源：
ECS SOLID STATE LETTERS | 2015年 / 4卷 / 06期
关键词：
JUNCTIONS; GE;
D O I：
10.1149/2.0061506ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work an effective diffusion suppression of low energy - high dose (11 keV/10(15) cm(-2)) phosphorous in 10 keV/5 x 10(14) cm-2 N-2+-implanted p-germanium is demonstrated. Diffusion of both species after isochronal 30 sec RTA annealing at 550-650 degrees C has been studied by SIMS in the presence of Al2O3 as surface capping layer. Nitrogen shows anomalous non-Fickian diffusion towards the Al2O3/Ge interface, while phosphorous dose loss and diffusion to the bulk are strongly suppressed in comparison to Ge substrate without nitrogen implantation. Possible physical mechanisms (involving phosphorous-vacancies or phosphorous-nitrogen complexes, and end-of-range interstitials) that explain this result are presented and discussed. (C) The Author(s) 2015. Published by ECS. All rights reserved.
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页码：P47 / P50
页数：4
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