Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

被引：5

作者：

Fang, Meihua ^{[1
]}

Fei, Tao ^{[1
]}

Bai, Mengying ^{[1
]}

Guo, Yipan ^{[1
]}

Lv, Jingpeng ^{[1
]}

Quan, Ronghui ^{[1
]}

Lu, Hongbo ^{[2
]}

Liu, Huiping ^{[3
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Nanjing 210016, Peoples R China

[2] Shanghai Inst Space Power Sources, State Key Lab Space Power Sources, Shanghai 200245, Peoples R China

[3] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

来源：

INTERNATIONAL JOURNAL OF PHOTOENERGY | 2020年 / 2020卷

关键词：

OPTICAL-PROPERTIES; RADIATION-DAMAGE; TEMPERATURE; DEFECTS; DEGRADATION;

D O I：

10.1155/2020/3082835

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120 degrees C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.

引用

页数：8

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