Microstructure and properties of SCT thin film by RF sputtering method

被引：0
|
作者：
Kim, JS [1 ]
Cho, CN [1 ]
Shin, CG [1 ]
Kim, CH [1 ]
Choi, WS [1 ]
Song, MJ [1 ]
So, BM [1 ]
Lee, JU [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Engn, Seoul, South Korea
来源：
PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3 | 2003年
关键词：
SCT thin films; sputtering; leakage current;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The(Sr1-xCax)TiO3 (SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SCT thin films were influenced with substitutional contents of Ca. The composition of SCT thin films were closed to stoichiometry(1.081similar to1.117 in A/B ratio). The maximum dielectric constant of thin film is obtained by annealing at 600[degreesC] of SCT15 thin film. The capacitance characteristics had a stable value below +/-5 [%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. In addition, leakage current increases and breakdown field decreases as a function of deposition temperature.
引用
收藏
页码：1100 / 1103
页数：4
相关论文
共 50 条
  • [21] Structure and Optical properties of ZnO thin film preparation using RF magnetron sputtering
    Quan, Shanyu
    Yang, Linmei
    Liu, Cong
    Zhang, Xudong
    OPTOELECTRONIC MATERIALS, PTS 1AND 2, 2010, 663-665 : 377 - 380
  • [22] Properties of the Highly Textured (200) NiO Thin Film Deposited by RF Magnetron Sputtering
    Wang, F. H.
    Li, P. J.
    Diao, C. C.
    Huang, C. C.
    Huang, H. H.
    Yang, C. F.
    PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON INTELLIGENT TECHNOLOGIES AND ENGINEERING SYSTEMS (ICITES2013), 2014, 293 : 147 - 154
  • [23] Preparation and microstructure of highly - Oriented LaNiO3 thin films by RF sputtering method
    Cheng, Xing-Hua
    Qiao, Liang
    Bi, Xiao-Fang
    Chinese Journal of Aeronautics, 2006, 19 (SUPPL.):
  • [24] Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering
    LI ShitaoQIAO XueliangCHEN JianguoJIA FangWU ChangleState Key Laboratory of Plastic Forming Simulation and Die Mould TechnologyHuazhong University of Science and TechnologyWuhan China
    北京科技大学学报, 2006, (08) : 743 - 743
  • [25] Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering
    Li Shitao
    Qiao Xueliang
    Chen Jianguo
    Jia Fang
    Wu Changle
    RARE METALS, 2006, 25 (04) : 359 - 364
  • [26] Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering
    LI Shitao
    RareMetals, 2006, (04) : 359 - 364
  • [27] Optical properties, microstructure, and multifractal analyses of ZnS thin films obtained by RF magnetron sputtering
    Reza Shakoury
    Ali Arman
    Ştefan Ţălu
    Koushik Ghosh
    Sahar Rezaee
    Carlos Luna
    Fredrick Mwema
    Khalil Sherafat
    Maryam Salehi
    Mohsen Mardani
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 5262 - 5273
  • [28] Optical properties, microstructure, and multifractal analyses of ZnS thin films obtained by RF magnetron sputtering
    Shakoury, Reza
    Arman, Ali
    Talu, Stefan
    Ghosh, Koushik
    Rezaee, Sahar
    Luna, Carlos
    Mwema, Fredrick
    Sherafat, Khalil
    Salehi, Maryam
    Mardani, Mohsen
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (07) : 5262 - 5273
  • [29] Microstructure and Optical Properties of ZnO Thin Film Buffer Layer Deposited by Magnetron Sputtering
    Wang Yuwei
    Liu Ping
    Li Wei
    Liu Xinkuan
    Ma Fengcang
    Chen Xiaohong
    He Daihua
    RARE METAL MATERIALS AND ENGINEERING, 2014, 43 (09) : 2203 - 2208
  • [30] Control of microstructure and magnetic properties in thin film disk by an ultra clean sputtering process
    Takahashi, M
    MATERIALS CHEMISTRY AND PHYSICS, 1997, 51 (01) : 15 - 22
12345