Nitride-based p-i-n photodetectors with Ni catalyst processing

Nitride-based materials have been widely used for photodetectors, however, Nitride-based p-i-n photodetectors with the use of InGaN as the intrinsic layer to modify the cut-off wavelength from 360 to 500nm was few reported. In this study, the p-i-n structure photodetectors with a p-GaN layer, an InGaN active layer and an n-type GaN layer were fabricated successfully. The Ni catalysts technology was applied in p-GaN layer to enhance ohmic characteristics of p-type layer. It was found that Nitride-based p-i-n photodetectors with the Ni catalysts technology could provide us a UV-to-visible rejection ratio of 224.7 between 360 and 400nm. Furthermore, the cut-off wavelength was around 375nm.