Nitride-Based p-i-n Ultraviolet Bandpass Photodetectors with Short-wave Barrier Layer

被引：0
|
作者：
Wang, Jun [1 ]
Guo, Jin [1 ]
Wu, Haoran [1 ]
Wang, Guosheng [1 ]
Song, Man [1 ]
Xie, Feng [1 ]
Wang, Wanjun [1 ]
机构：
[1] China Elect Technol Grp Corp, Res Inst 38, Hefei 230088, Anhui, Peoples R China
来源：
2016 15TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2016年
关键词：
Ultraviolet; simulation; unipolar blocking layers; band-pass photodiodes; SAPPHIRE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a numerical simulation study of nitride-based p-i-n ultraviolet bandpass photodetectors, which was designed with a high Al composition AlGaN unipolar barrier layer. The AlGaN unipolar blocking layers act as potential barrier that reduce the collection of carriers generated by high energy photons in p-Al0.1Ga0.9N short-Wave filter layer. Compared to the conventional nitride-based p-i-n band-pass photodiodes, this new structure devices are capable high short-wave rejection ration. To validate the model, we compared the simulation predictions with experimental data of conventional p-i-n bandpass photodiodes published in the literature. This concept can be applicable for any p-i-n photodetectors.
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页数：3
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