A cost-efficient Current-Source Gate Driver for SiC MOSFET Module and its Comparison with Voltage-Source Gate Driver

被引:4
|
作者
Wang, Xiang [1 ]
Wu, Haimeng [2 ]
Pickert, Volker [1 ]
机构
[1] Newcastle Univ, Sch Engn, Newcastle Upon Tyne, Tyne & Wear, England
[2] Northumbria Univ, Dept Math Phys & Elect Engn, Newcastle Upon Tyne, Tyne & Wear, England
基金
英国工程与自然科学研究理事会;
关键词
current-source gate driver; switching performance; SiC MOSFET module; turn-on time;
D O I
10.1109/IPEMC-ECCEAsia48364.2020.9368201
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A current-source gate driver (CSG) is considered as a candidate to improve the switching performance of Silicon Carbide (SiC) MOSFET compared with a SiC MOSFET powered by a voltage-source gate driver (VSG). Various CSG circuits have been proposed to promote the switching transients by generating a constant gate current. However, those circuits are normally designed with complicated structures and high costs due to extra components and control signals. This paper proposes a cost-efficient approach to adjust the gate current of the conventional VSG which can improve its dynamic performance of the devices. Following the comparison analysis of CSG and VSG, a simple-structure circuit is introduced to replace the gate resistor in the conventional VSG. This circuit transforms that the gate current shows constant levels during the switching transients, which exhibits current-source characteristics. Simulation and experimental studies have been undertaken to verify the effectiveness of the proposed circuit. The results show that the turn-on switching time and oscillation can be reduced using the proposed circuit compared with the conventional VSG and the proposed circuit is less hardware intensive compared to other CSGs.
引用
收藏
页码:979 / 984
页数:6
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