Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's

被引：7
|
作者：
van Meer, H
Valenza, M
van der Zanden, K
De Raedt, W
Simoen, E
Schreurs, D
Kaufmann, L
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Univ Montpellier 2, Ctr Electron & Microoptoelectron Montpellier, F-34095 Montpellier 5, France
[3] COBRA Interuniv Res Inst Commun Technol, Fac Elect Engn, Elect Devices Grp, NL-5600 MB Eindhoven, Netherlands
来源：
IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 10期
关键词：
D O I：
10.1109/55.720189
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time the effect of increasing the Schottky barrier's Al content of InP-based InAlAs-InGaAs HEMT's from 48 to 60% on the low-frequency (LP) drain and gate current noise is investigated. It is shown that the LF gate current noise S-IG (f) for the 60% case decreases by almost three decades, while the LF drain current noise S-IDS(f) stays at the same level. From small coherence values, it can be concluded that drain and gate noise sources can be treated separately which facilitates the LF noise modeling of these HEMT's.
引用
收藏
页码：370 / 372
页数：3
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