Influences of arc current on composition and properties of MgO thin films prepared by cathodic vacuum arc deposition

被引：2

作者：

Zhu, Daoyun ^{[1
,2
]}

Zheng, Changxi ^{[2
]}

Wang, Mingdong ^{[2
]}

Liu, Yi ^{[2
]}

Chen, Dihu ^{[2
]}

He, Zhenhui ^{[2
]}

Wen, Lishi ^{[2
]}

Cheung, W. Y. ^{[3
,4
]}

机构：

[1] Guangdong Univ Technol, Expt Teaching Dept, 100 Waihuanxi Rd, Guangzhou 510006, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[3] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

[4] Chinese Univ Hong Kong, Mat Technol Res Ctr, Shatin, Hong Kong, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 124卷 / 2-3期

关键词：

MgO thin films; Vacuum arc deposition; Arc current; PROTECTIVE LAYER; MECHANISM; VOLTAGE; ENERGY;

D O I：

10.1016/j.matchemphys.2010.08.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MgO thin films with high optical transmittances (more than 90%) were prepared by cathodic vacuum arc deposition technique With the increase of arc current from 40 to 80 A the deposition pressure decreases and the film thickness Increases the atomic ratio of Mg/O in MgO thin films (obtained by RBS) increases from 097 to 117 giving that deposited at 50 A most close to the stoichiometric composition of the bulk MgO the grains of MgO thin films grow gradually as shown in SEM Images XRD patterns show that MgO (1 1 0) orientation is predominant for films prepared at the arc currents ranged from 50 to 70 A The MgO (1 0 0) orientation is much enhanced and comparable to that of MgO (1 1 0) for films prepared at the arc current of 80 A The secondary electron emission coefficient of MgO thin film Increases with arc current ranged from 50 to 70 A (C) 2010 Elsevier B V All rights reserved

引用

页码：1146 / 1150

页数：5

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