Photoluminescence and diode characteristic of ZnO thin films/junctions fabricated by pulsed laser deposition (PLD) technique

被引：2

作者：

Sasaki, Kazuhiro ^{[1
]}

Komiyama, Takao ^{[1
]}

Chonan, Yasunori ^{[1
]}

Yamaguchi, Hiroyuki ^{[1
]}

Aoyama, Takashi ^{[1
]}

机构：

[1] Akita Prefectural Univ, Dept Elect & Informat Syst, Akita 0150055, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2 | 2010年 / 7卷 / 02期

关键词：

P-TYPE ZNO; MOLECULAR-BEAM EPITAXY; FILMS;

D O I：

10.1002/pssc.200982495

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO:Ga and ZnO:P films were grown by a pulsed laser deposition (PLD) technique changing the dopant concentrations, and their photoluminescence (PL) spectra were obtained. Then, ZnO:P/ZnO:Ga junctions were fabricated and their junction characteristics were evaluated. As the Ga concentration increased in the films, the PL intensity was decreased while as the P concentration increased, the PL intensity was increased. The maximum PL intensities were obtained for the films of 0.5%(Ga) and 7.0% (P), respectively. Rectifying junction characteristics were observed only for the combination of 0.5-1.0% (Ga) and 5.0% (P) films. Mutual dopant diffusion is supposed to explain the relation between the PL and the junction characteristics. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：468 / 471

页数：4

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