Photoluminescence and diode characteristic of ZnO thin films/junctions fabricated by pulsed laser deposition (PLD) technique

被引：2
|
作者：
Sasaki, Kazuhiro [1 ]
Komiyama, Takao [1 ]
Chonan, Yasunori [1 ]
Yamaguchi, Hiroyuki [1 ]
Aoyama, Takashi [1 ]
机构：
[1] Akita Prefectural Univ, Dept Elect & Informat Syst, Akita 0150055, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2 | 2010年 / 7卷 / 02期
关键词：
P-TYPE ZNO; MOLECULAR-BEAM EPITAXY; FILMS;
D O I：
10.1002/pssc.200982495
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnO:Ga and ZnO:P films were grown by a pulsed laser deposition (PLD) technique changing the dopant concentrations, and their photoluminescence (PL) spectra were obtained. Then, ZnO:P/ZnO:Ga junctions were fabricated and their junction characteristics were evaluated. As the Ga concentration increased in the films, the PL intensity was decreased while as the P concentration increased, the PL intensity was increased. The maximum PL intensities were obtained for the films of 0.5%(Ga) and 7.0% (P), respectively. Rectifying junction characteristics were observed only for the combination of 0.5-1.0% (Ga) and 5.0% (P) films. Mutual dopant diffusion is supposed to explain the relation between the PL and the junction characteristics. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：468 / 471
页数：4
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