Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties

被引：15

作者：

Chroneos, A. ^{[1
,2
]}

Vovk, R. V. ^{[3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Coventry Univ, Fac Engn & Comp, Coventry CV1 5FB, W Midlands, England

[3] V Karazin Kharkiv Natl Univ, Dept Phys, UA-61077 Kharkov, Ukraine

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 04期

关键词：

SELF-DIFFUSION; FORMATION VOLUME; IMPURITY DIFFUSION; ACTIVATION-ENERGY; IONIC-CRYSTALS; TEMPERATURE; PRESSURE; GE; MIGRATION; VACANCIES;

D O I：

10.1007/s10854-014-2655-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium is a p-type dopant that can be considered for p-channel germanium metal oxide semiconductor field effect transistors. As such understanding its diffusion properties over a range of temperatures and pressures is technologically important. This can be realized in the cBa"broken vertical bar model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (a"broken vertical bar). In the present study elastic and expansivity data is used in the framework of the cBa"broken vertical bar model to derive the indium diffusion coefficient in germanium in the temperature range 827-1,176 K. The calculated results are in excellent agreement with the available experimental data.

引用

页码：2113 / 2116

页数：4

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