Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

被引：22

作者：

Luo, Haoze ^{[1
]}

Baker, Nick ^{[1
]}

Iannuzzo, Francesco ^{[1
]}

Blaabjerg, Frede ^{[1
]}

机构：

[1] Aalborg Univ, Dept Energy Technol, Aalborg, Denmark

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 76卷

关键词：

THRESHOLD-VOLTAGE INSTABILITY; RELIABILITY; ISSUES;

D O I：

10.1016/j.microrel.2017.07.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermomechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：415 / 419

页数：5

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