ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V mu m(-1) at a current density of 10 mu A cm(-2), and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry. (C) 2017 Elsevier B.V. All rights reserved.
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Univ Sains Malaysia, Sch Phys, Nanooptoelect Res NOR Lab, Gelugor 11800, Pulau Pinang, MalaysiaUniv Sains Malaysia, Sch Phys, Nanooptoelect Res NOR Lab, Gelugor 11800, Pulau Pinang, Malaysia
Dalvand, Ramazanali
Mahmud, Shahrom
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Univ Sains Malaysia, Sch Phys, Nanooptoelect Res NOR Lab, Gelugor 11800, Pulau Pinang, MalaysiaUniv Sains Malaysia, Sch Phys, Nanooptoelect Res NOR Lab, Gelugor 11800, Pulau Pinang, Malaysia
Mahmud, Shahrom
Rouhi, Jaial
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Univ Teknol MARA, Inst Sci, Ctr Nanosci & Nanotechnol, NANOsciTech Ctr, Shah Alam 40450, Selangor, MalaysiaUniv Sains Malaysia, Sch Phys, Nanooptoelect Res NOR Lab, Gelugor 11800, Pulau Pinang, Malaysia
Rouhi, Jaial
Ooi, C. H. Raymond
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Univ Malaya, Dept Phys, Kuala Lumpur 50603, MalaysiaUniv Sains Malaysia, Sch Phys, Nanooptoelect Res NOR Lab, Gelugor 11800, Pulau Pinang, Malaysia
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Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South KoreaSungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South Korea
Raghavan, C. M.
Yan, Changzeng
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Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South KoreaSungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South Korea
Yan, Changzeng
Patole, Shashikant P.
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Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Sch Adv Mat Sci & Engn, Suwon 440746, South KoreaSungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South Korea
Patole, Shashikant P.
Yoo, J. B.
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Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Sch Adv Mat Sci & Engn, Suwon 440746, South KoreaSungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South Korea
Yoo, J. B.
Kang, Dae Joon
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Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South KoreaSungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Inst Basic Sci, Dept Energy Sci,BK Phys Res Div 21, Suwon 440746, South Korea
机构:
E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R China
Li, Lijun
Yu, Ke
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E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R China
Yu, Ke
Peng, Deyan
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E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R China
Peng, Deyan
Zhang, Zhi
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E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R China
Zhang, Zhi
Zhu, Ziqiang
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E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R China