Microfluidic solution-processed organic and perovskite nanowires fabricated for field-effect transistors and photodetectors

被引:19
|
作者
Chen, Ping-An [1 ,2 ]
Guo, Jin [1 ,2 ]
Nouri, Mehdi [3 ]
Tao, Quanyang [4 ,5 ]
Li, Zhiwei [4 ,5 ]
Li, Qianyuan [4 ,5 ]
Du, Lulu [6 ]
Chen, Huajie [6 ]
Dong, Zaizai [7 ,8 ]
Chang, Lingqian [7 ,8 ]
Liu, Yuan [4 ,5 ]
Liao, Lei [1 ,2 ]
Hu, Yuanyuan [1 ,2 ]
机构
[1] Hunan Univ, Minist Educ, Key Lab Micro Nano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, Sch Phys & Elect, Prov Key Lab Low Dimens Struct Phys & Devices, Changsha 410082, Hunan, Peoples R China
[3] Univ North Texas, Dept Biomed Engn, Denton, TX 76207 USA
[4] Hunan Univ, Sch Phys & Elect, Hunan Key Lab Two Dimens Mat, Changsha 410082, Hunan, Peoples R China
[5] Hunan Univ, Sch Phys & Elect, State Key Lab Chemobiosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
[6] Xiangtan Univ, Coll Chem, Minist Educ, Key Lab Environm Friendly Chem & Applicat, Xiangtan 411105, Peoples R China
[7] Beihang Univ, Sch Biol Sci & Med Engn, Beijing 100083, Peoples R China
[8] Beihang Univ, Beijing Adv Innovat Ctr Biomed Engn, INSCA, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
THIN-FILM TRANSISTORS; CRYSTALLINE MICRORIBBONS; PERFORMANCE; ELECTRON; SEMICONDUCTOR; DEPOSITION; PENTACENE; TRANSPORT; SYSTEMS; LENGTHS;
D O I
10.1039/c9tc05628a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solution-processed semiconductor nanowires are attractive for application in low-cost and high-performance electronic devices. However, current approaches for nanowire preparation face the problems of having low-throughput and poor controllability of the dimension and location of nanowires. Here we report a simple yet efficient method to implement solution-processable semiconductor nanowires using microfluidics. The method enables fabrication of semiconductor nanowires with high uniformity and well-defined sizes, as well as precise control of their location and alignment in device assembly. Moreover, this method is found to be applicable to various semiconductors, including organic semiconductors (OSCs) and metal-halide perovskites. Furthermore, we have shown the feasibility of employing these semiconductor nanowires to construct different types of devices like field-effect transistors (FETs) and photodetectors (PDs). In particular, lateral heterojunctions consisting of perovskite/OSC nanowires were obtained by this method, based on which high-performance phototransistors were achieved. Overall, the demonstrated method provides a promising route to the fabrication and application of nanowire-based devices.
引用
收藏
页码:2353 / 2362
页数:10
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