Single-grain Si thin-film transistors for analog and RF circuit applications

被引：0

作者：

Saputra, N. ^{[1
]}

Danesh, M. ^{[1
]}

Baiano, A. ^{[1
]}

Ishihara, R. ^{[1
]}

Long, J. R. ^{[1
]}

Metselaar, J. W. ^{[1
]}

Beenakker, C. I. M. ^{[1
]}

Karaki, N. ^{[2
]}

Hiroshima, Y. ^{[2
]}

Inoue, S. ^{[2
]}

机构：

[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, Delft, Netherlands

[2] SEIKO EPSON Cooperat, Frontier Dev Res Ctr, Nagano, Japan

来源：

ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With f(T) in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.

引用

页码：107 / +

页数：2

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