Negative-U centers in 4H silicon carbide

被引：156

作者：

Hemmingsson, CG ^{[1
]}

Son, NT ^{[1
]}

Ellison, A ^{[1
]}

Zhang, J ^{[1
]}

Janzen, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.58.R10119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Characterization of two negative-U centers in 4H SiC has been performed using various capacitance transient techniques. Each center gives rise to one acceptor level (-/0) and one donor level (0/+), where the electron ionization energy of the acceptor level is larger than that of the donor level. The two-electron emissions from the two acceptor levels give rise to the previously reported deep level transient spectroscopy peak associated with the so-called Z(1), center. Direct evidence for the inverted ordering and temperature dependence studies of the electron-capture cross sections of the acceptor levels will be presented. [S0163-1829(98)51140-X].

引用

页码：10119 / 10122

页数：4

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