共 50 条
- [42] Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs NANOSCALE RESEARCH LETTERS, 2021, 16 (01):
- [43] Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs Nanoscale Research Letters, 16
- [44] CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN β-Ga2O3 MOSFETs OXIDE-BASED MATERIALS AND DEVICES XIII, 2022, 12002
- [46] Ga2O3(Gd2O3) as a gate dielectric for GaAs MOSFETs (invited) PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 1998, 98 (02): : 434 - 442
- [47] Demonstration of enhancement-mode p-channel GaAs MOSFETs with Ga2O3(Gd2O3) passivation PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI), 1997, 97 (01): : 84 - 90
- [48] Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 67 - 70