Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier

被引：2

作者：

Lee, Seokchul ^{[1
]}

Ju, Inchan ^{[1
,2
]}

Gong, Yunyi ^{[1
]}

Cardoso, Adilson S. ^{[3
]}

Connor, Jeffrey D. ^{[3
]}

Cho, Moon-Kyu ^{[1
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Tech, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Qualcomm Atheros Inc, San Jose, CA 95110 USA

[3] Georgia Tech Res Inst, Atlanta, GA 30332 USA

来源：

2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2020年

关键词：

Broadband cascode; distributed power amplifiers; HBT; millimeter-wave; non-uniform; SiGe BiCMOS; wideband;

D O I：

10.1109/BCICTS48439.2020.9392963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of an 18-50 GHz SiGe HBT cascode, non-uniform distributed power amplifier (NDPA), which was implemented in 0.13-pm SiGe BiCMOS technology. To expand the NDPA concept into the millimeter-wave (mm-wave) spectrum, a multi-section lumped element artificial transmission line is proposed to synthesize high characteristic impedance of the first and second stage's collector lines, thereby maintaining an optimum load at each active stage over the entire bandwidth. The proposed mm-wave NDPA achieves a peak saturated output power of 19.0 dBm and a peak power-added efficiency (PAE) of 19.1% at 32.0 GHz. The PAE was above 14.2% across the 18-50 GHz bandwidth, which demonstrates the NDPA's optimum power matching capability.

引用

页数：4

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