Interdiffusion in InGaAs quantum dots by ion implantation

被引：0
|
作者：
Lever, P [1 ]
Tan, HH [1 ]
Reece, P [1 ]
Gal, M [1 ]
Jagadish, C [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
来源：
COMMAD 2002 PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/COMMAD.2002.1237303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and significant narrowing was seen in the photoluminescence spectra of the implanted and annealed samples. Lower implantation doses were required to create similar energy shifts in quantum dot samples than reported in the quantum well case. The energy shifts and photoluminescence intensities were found to depend on the ions used, as well as the amount of damage created in the samples. Temperature dependent implantations were found to follow the trends reported for quantum wells.
引用
收藏
页码：515 / 518
页数：4
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