Effect of sintering temperature on the structural properties for CaBi4Ti4O15 compound

被引:1
|
作者
Abdulmajeed, I. M. [1 ]
Ibraheem, S. H. [2 ]
机构
[1] Univ Baghdad, Coll Sci, Dept Phys, Baghdad, Iraq
[2] Mustansiriyah Univ, Coll Basic Educ, Baghdad, Iraq
来源
JOURNAL OF OVONIC RESEARCH | 2022年 / 18卷 / 04期
关键词
Aurivillius phase; CaBi4Ti4O15; Dielectric behavior;
D O I
10.15251/JOR.2022.184.4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline CaBi4Ti4O15 (CBT) ceramics were successfully prepared by traditional ceramic technique. The X-ray diffraction spectrum of produced powder was studied at different temperatures (650 C, 850 C, and 1050C. The sintering temperature is very effective factor to obtained high crystallinity with very pure for CBT compound. The product structures analyzed using X-ray diffraction, it confirms, high purity polycrystalline phase formation revealed the existence of bismuth layered perovskite phase Aurivillius orthorhombic crystal structure at 1050 degrees C. The produced samples' A field emission scanning electron microscope was used to analyze the morphologies (FESEM). It shows crystallites particles in the range about 149-349 nm for the product sintered at 1050 degrees C, it shows a dense microstructure with the presence of large orthorhombic distortion. The dielectric constant and dielectric loss were measured at room temperature as a function of frequency. The dielectric constant of CBT increases in sintering temperature. Moreover, the samples sintered at 1050 degrees C exhibits good dielectric properties and lower value of tan delta.
引用
收藏
页码:499 / 505
页数:7
相关论文
共 50 条
  • [21] Microwave assisted synthesis and sintering of lead-free ferroelectric CaBi4Ti4O15 ceramics
    Reddy, E. Sivanagi
    Sukumaran, Sudhin
    Raju, K. C. James
    MATERIALS TODAY-PROCEEDINGS, 2016, 3 (06) : 2213 - 2219
  • [22] Study on the Textured CaBi4Ti4O15 Ceramics with Sc Modification
    Ma, Mingfengyu
    Jin, Guoxi
    Zhang, Deqi
    Zheng, Qianqian
    PROCEEDINGS OF THE 2015 INTERNATIONAL SYMPOSIUM ON MATERIAL, ENERGY AND ENVIRONMENT ENGINEERING (ISM3E 2015), 2016, 46 : 166 - 169
  • [23] Polarization switching in CaBi4Ti4O15 ferroelectric thin films
    Fu, DS
    Suzuki, K
    Kato, K
    ELECTROCERAMICS IN JAPAN VII, 2004, 269 : 41 - 44
  • [24] A comparative study of the Aurivillius phase ferroelectrics CaBi4Ti4O15 and BaBi4Ti4O15
    Tellier, J
    Boullay, P
    Manier, M
    Mercurio, D
    JOURNAL OF SOLID STATE CHEMISTRY, 2004, 177 (06) : 1829 - 1837
  • [25] Enhanced piezoelectric properties of Nb and Mn co-doped CaBi4Ti4O15 high temperature piezoceramics
    Shen, Zong-Yang
    Sun, Huajun
    Tang, Yanxue
    Li, Yueming
    Zhang, Shujun
    MATERIALS RESEARCH BULLETIN, 2015, 63 : 129 - 133
  • [26] A-site (MCe) substitution effects on the structures and properties of CaBi4Ti4O15 ceramics
    Yan, HX
    Li, CG
    Zhou, JG
    Zhu, WM
    He, LX
    Song, YX
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6339 - 6342
  • [27] Ferro- and piezoelectric properties of CaBi4Ti4O15 films with polar axis orientation
    Kato, K
    Suzuki, K
    Fu, D
    Tanaka, K
    Nishizawa, K
    Miki, T
    INTEGRATED FERROELECTRICS, 2005, 69 : 143 - 149
  • [28] Solution-based fabrication and electrical properties of CaBi4Ti4O15 thin films
    Cheng, Chien-Min
    Chen, Kai-Huang
    Tsai, Jen-Hwan
    Wu, Chia-Lin
    CERAMICS INTERNATIONAL, 2012, 38 : S87 - S90
  • [29] Effects of (Li,Ce) on the Dielectric, Piezoelectric and Impendence Properties of CaBi4Ti4O15 Piezoceramics
    Peng, Zhihang
    Huang, Fengkang
    Chen, Qiang
    Bao, Shaoming
    Wang, Yadan
    Xiao, Dinquan
    Zhu, Jianguo
    FERROELECTRICS, 2013, 447 (01) : 69 - 77
  • [30] Microstructure and Impedance Analysis of CaBi4Ti4O15 Piezoceramics with (LiCe)-Modifications
    Peng, Zhihang
    Huang, Fengkang
    Chen, Qiang
    Bao, Shaoming
    Wang, Xiaoxiao
    Xiao, Dinquan
    Zhu, Jianguo
    2012 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS HELD JOINTLY WITH 11TH IEEE ECAPD AND IEEE PFM (ISAF/ECAPD/PFM), 2012,