SiC Power Device Reliability

被引：0
|
作者：
Gajewski, Don [1 ]
机构：
[1] CREE, Wolfspeed, Durham, NC 27709 USA
来源：
2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：xi / xi
页数：1
相关论文
共 50 条
  • [21] Reliability of Commercially Available SiC Power MOSFETs
    Lelis, A. J.
    Green, R.
    El, M.
    Habersat, D. B.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 79 - 85
  • [22] Review of power semiconductor device reliability for power converters
    1600, China Power Supply Society (02):
  • [23] A parametric device study for SiC power electronics
    Ozpineci, B
    Tolbert, LM
    Islam, SK
    Hasanuzzaman, M
    CONFERENCE RECORD OF THE 2002 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4, 2002, : 570 - 575
  • [24] Growth and characterization of SiC power device material
    Linkoping Univ, Linkoping, Sweden
    Mater Sci Forum, pt 1 (97-102):
  • [25] Growth and characterisation of SiC power device material
    Kordina, O
    Henry, A
    Janzen, E
    Carter, CH
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 97 - 102
  • [26] SiC power device advantages enhance power conversion systems
    Hamaguchi, Taku
    SOLID STATE TECHNOLOGY, 2014, 57 (02) : 16 - 20
  • [27] Critical materials, device design, performance and reliability issues in 4H-SiC power UMOSFET structures
    Agarwal, AK
    Siergiej, RR
    Seshadri, S
    White, MH
    McMullin, PG
    Burk, AA
    Rowland, LB
    Brandt, CD
    Hopkins, RH
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 87 - 92
  • [28] Reliability and stability of SiC power MOSFETs and Next-Generation SiC MOSFETs
    Hull, B.
    Allen, S.
    Zhang, Q.
    Gajewski, D.
    Pala, V
    Richmond, J.
    Ryu, S.
    O'Loughlin, M.
    Van Brunt, E.
    Cheng, L.
    Burk, A.
    Casady, J.
    Grider, D.
    Palmour, J.
    2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 138 - 141
  • [29] GaN Power Device and Reliability for Automotive Applications
    Kachi, Tetsu
    Kikuta, Daigo
    Uesugi, Tsutomu
    2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
  • [30] Implications for Robust Reliability Testing of Power SiC MOSFETs
    Green, R.
    Lelis, A. J.
    Habersat, D.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 215 - 224
12345