Dependence of lattice distortion of monoclinic phase on film thickness in Pb(Zr0.58Ti0.42)O3 thin films

被引：7

作者：

Wang, J. N. ^{[1
]}

Wang, L. D. ^{[1
]}

Li, W. L. ^{[1
]}

Fei, W. D. ^{[1
]}

机构：

[1] Harbin Inst Technol, State Key Lab Welding Prod Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 07期

关键词：

Pb(Zr1-xTix)O-3 thin films; Lattice distortion; Film thickness; Texture; PEROVSKITE; DEPOSITION; ORIGIN;

D O I：

10.1016/j.jallcom.2010.12.061

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, the chosen composition of PZT film falls in rhombohedral phase region and the dependence of lattice distortion on film thickness in sol-gel derived Pb(Zr0.58Ti0.42)O-3 thin films was systematically investigated. The results confirm that the Pb(Zr0.58Ti0.42)O-3 films have monoclinic phase even though the composition falls in the rhombohedral phase region. The mixed textures of (1 0 0) and (1 1 1) occur in the PZT films. In the case of mixed textures, a method using psi-scan XRD to characterize the phase type of Pb(Zr0.58Ti0.42)O-3 film is presented. It is found that the phase type of (1 0 0)-oriented grains is M-A phase, and that of (1 1 1)-oriented grains is M-B phase. Moreover, the lattice constants of both M-A and M-B phases are sensitive to the film thickness. The lattice distortion of monoclinic phase becomes smaller as film thickness increases. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3347 / 3352

页数：6

共 50 条

[41] Preparation of Pb(Zr, Ti)O3 thin films by multitarget sputtering
Hase, Takashi
Hirata, Kazuo
Amanuma, Kazushi
Hosokawa, Naokichi
Miyasaka, Yoichi
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1994, 33 (9 B): : 5244 - 5248
[42] Multilayer Pb(Zr,Ti)O3 Thin Films for Ultrasonic Transducer
Nakamoto, Shoma
Sano, Ryo
Kanda, Kensuke
Fujita, Takayuki
Maenaka, Kazusuke
ELECTRONICS AND COMMUNICATIONS IN JAPAN, 2018, 101 (04) : 63 - 68
[43] Refinement of Pb(Zr,Ti)O3 thin films grown by MOCVD
Shimizu, M.
Yoshida, M.
Fujisawa, H.
Niu, H.
IEEE International Symposium on Applications of Ferroelectrics, 1998, : 139 - 142
[44] Preparation of Pb(Zr,Ti)O3 thin films on glass substrates
Hioki, Tsuyoshi, 1600, JJAP, Tokyo (39):
[45] Orientation dependence of dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayered thin films
Wu, Jiagang
Xiao, Dingquan
Zhu, Jiliang
Zhu, Jianguo
APPLIED PHYSICS LETTERS, 2007, 91 (19)
[46] Transparent piezoelectric thin-film devices: Pb(Zr, Ti)O3 thin films on glass substrates
Ueda, Kazuki
Kweon, Sang-Hyo
Hida, Hirotaka
Mukouyama, Yoshiharu
Kanno, Isaku
Sensors and Actuators, A: Physical, 2021, 327
[47] Transparent piezoelectric thin-film devices: Pb(Zr, Ti)O3 thin films on glass substrates
Ueda, Kazuki
Kweon, Sang-Hyo
Hida, Hirotaka
Mukouyama, Yoshiharu
Kanno, Isaku
SENSORS AND ACTUATORS A-PHYSICAL, 2021, 327
[48] Magneto-electric coupling and transport properties of LaFeO3-Pb (Zr0.58Ti0.42)O3-organic poly(vinylidene fluoride) nanocomposite
Nath, Debajyoti
Biswas, Piyali
Mandal, S. K.
MATERIALS TODAY-PROCEEDINGS, 2021, 46 : 6145 - 6148
[49] Thickness dependence of the time dependent dielectric breakdown characteristics of Pb(Zr, Ti)O3 thin film capacitors for memory device applications
Kundu, T.K., 2000, JJAP, Tokyo, Japan (39):
[50] Thickness dependence of the time dependent dielectric breakdown characteristics of Pb(Zr, Ti)O3 thin film capacitors for memory device applications
Kundu, TK
Lee, JYM
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A): : 3488 - 3491

← 1 2 3 4 5 →