All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength

被引：16

作者：

Haret, Laurent-Daniel ^{[1
]}

Checoury, Xavier ^{[1
]}

Han, Zheng ^{[1
]}

Boucaud, Philippe ^{[1
]}

Combrie, Sylvain ^{[2
]}

De Rossi, Alfredo ^{[2
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Thales Res & Technol, F-91767 Palaiseau, France

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 23期

关键词：

WAVE-GUIDE; HIGH-SPEED; HIGH RESPONSIVITY; DEFECT; PHOTODETECTORS; NANOCAVITIES; PHOTODIODES;

D O I：

10.1364/OE.18.023965

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q = 60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz. (C) 2010 Optical Society of America

引用

页码：23965 / 23972

页数：8

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