All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength

被引：16
|
作者：
Haret, Laurent-Daniel [1 ]
Checoury, Xavier [1 ]
Han, Zheng [1 ]
Boucaud, Philippe [1 ]
Combrie, Sylvain [2 ]
De Rossi, Alfredo [2 ]
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] Thales Res & Technol, F-91767 Palaiseau, France
来源：
OPTICS EXPRESS | 2010年 / 18卷 / 23期
关键词：
WAVE-GUIDE; HIGH-SPEED; HIGH RESPONSIVITY; DEFECT; PHOTODETECTORS; NANOCAVITIES; PHOTODIODES;
D O I：
10.1364/OE.18.023965
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q = 60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz. (C) 2010 Optical Society of America
引用
收藏
页码：23965 / 23972
页数：8
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