Characteristics of 4H-SiC MOS interface annealed in N2O

被引：65

作者：

Fujihira, K ^{[1
]}

Tarui, Y ^{[1
]}

Imaizumi, M ^{[1
]}

Ohtsuka, K ^{[1
]}

Takami, T ^{[1
]}

Shiramizu, T ^{[1
]}

Kawase, K ^{[1
]}

Tanimura, J ^{[1
]}

Ozeki, T ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 06期

关键词：

silicon carbide; oxidation; nitridation; channel mobility; interface state density; MOSFET;

D O I：

10.1016/j.sse.2004.10.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC(0001) MOSFET annealed in N2O at below 1150 degrees C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C-V measurement of n-type MOS capacitors, the interface state density is revealed to decrease at higher anneal temperature. The field effect mobility of 30 cm(2)/Vs is achieved by 1150 degrees C anneal for 3 h, which is about 10 times higher than that of not annealed MOSFET. Epitaxial n-channel MOSFET annealed in N2O has been also fabricated. A positive threshold voltage of 0.46 V and the field effect mobility of 45 cm(2)/Vs are attained. The effective mobility at 2.5 MV/cm is 34 cm(2)/Vs, which is five times higher than that for not annealed sample, suggesting that the N2O anneal improves the MOS interface quality. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：896 / 901

页数：6

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