Strain relaxation in InxGa1-xN/GaN quantum well structures

被引：9

作者：

Emara, Ahmed M. ^{[1
]}

Berkman, E. Acar ^{[2
]}

Zavada, J.

El-Masry, Nadia A. ^{[2
]}

Bedair, S. M. ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

InGaN; strain relaxation; GaN-LED; GAN-ALN; FIELD; DEPENDENCE;

D O I：

10.1002/pssc.201000984

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the thickness dependence of strain relaxation in InxGa1-xN/GaN for single and multiple quantum-well structures. For InGaN wells thicker than a certain value gradual relaxation occurs and can be presented by two relaxation mechanisms. The first is related to the relaxation of the InGaN well, and the second to the relaxation of the whole multiple quantum well structure. We have also found that the onset of relaxation of multiple quantum wells depends on the number of quantum wells. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2034 / 2037

页数：4

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