Predictive simulation of AlGaN/GaN HEMTs

被引：0

作者：

Vitanov, S.

Palankovski, V.

Murad, S. ^{[2
]}

Roedle, T. ^{[2
]}

Quay, R. ^{[3
]}

Selberherr, S. ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, Adv Mat & Device Anal Grp, Gusshausstr 27-29-E360, A-1040 Vienna, Austria

[2] NXP Semicond, ICRF, NL-6534 AE Nijmegen, Netherlands

[3] Fraunhofer Inst Solid State Phys IAF, D-79108 Freiburg, Germany

来源：

IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved.

引用

页码：131 / +

页数：3

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