Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer

被引：6
|
作者：
An, Chee-Hong [1 ]
Byun, Young-Chul [1 ]
Cho, Mann-Ho [2 ]
Kim, Hyoungsub [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 06期
关键词：
HfO2; InP; Al2O3; interface layers; thermal stability;
D O I：
10.1002/pssr.201206178
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the thermal stability of HfO2 on an InP structure when an Al2O3 interface passivation layer (PL) was introduced. In contrast to the thick (similar to 4 nm) Al2O3-PL, an almost complete disappearance of the thin (similar to 1 nm) Al2O3-PL was observed after a post-deposition anneal at 600 degrees C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al2O3-PL with HfO2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：247 / 249
页数：3
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