Influence of Ce3+ Concentration on the Thermal Stability and Charge-Trapping Dynamics in the Green Emitting Phosphor CaSc2O4:Ce3+

被引:28
|
作者
Sharma, Suchinder K. [1 ]
Bettinelli, Marco [2 ,3 ]
Carrasco, Irene [2 ,3 ]
Karlsson, Maths [1 ]
机构
[1] Chalmers Univ Technol, Dept Chem & Chem Engn, S-41296 Gothenburg, Sweden
[2] Univ Verona, Luminescent Mat Lab, Dept Biotechnol, Str Grazie 15371 34, Verona, Italy
[3] INSTM, UdR Verona, Str Grazie 15371 34, Verona, Italy
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2017年 / 121卷 / 41期
基金
瑞典研究理事会;
关键词
TRANSITION-METAL; LANTHANIDE IMPURITIES; OPTICAL-PROPERTIES; BINDING-ENERGIES; LUMINESCENCE; CASC2O4/CE3+; MECHANISM;
D O I
10.1021/acs.jpcc.7b08263
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The influence of the Ce3+ concentration on the excitation and emission characteristics, thermal stability, and charge-trapping-detrapping dynamics, of the green-emitting phosphor Ce3+ doped calcium scandium oxide (CaSc2O4) with very dilute Ce3+ substitutions (0.5, 1.0, and 1.5%), has been investigated using optical spectroscopy techniques. The diffuse reflectance and excitation spectra are found to exhibit a nonsystematic behavior with varying Ce3+ concentration, mainly linked to spectral band-overlap, whereas the emission spectra display only minor changes with varying Ce3+ concentration, suggesting that the local structural coordination of the Ce3+ dopants remains the same for different Ce3+ dopant levels. The major impact of Ce3+ concentration is seen on the thermal quenching temperature, which is found to be as high as T-50% approximate to 600 K for the most dilute Ce3+ doping (0.5%), followed by T-50% approximate to 530 K for 1.0% doping and T-50% approximate to 500 K for 1.5% doping, respectively. The materials are found to display a red-shift of the emitted light from 518 to 535 nm with increasing temperature from T = 80 K to T = 800 K, for all Ce3+ dopant levels. Thermoluminescence glow curves provide evidence for five charge-trapping defects, which are found to exhibit different charge-trapping dynamics for excitation into different 5d levels. It is argued that the three deeper traps can be filled by athermal tunneling of charges from the Ce3+ 5d(1) level, while the two shallower traps can only be filled when the charges move through the conduction band of the material.
引用
收藏
页码:23096 / 23103
页数:8
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