Conductance through chains of Ge/Si quantum dots: Crossover from one-dimensional to quasi-one-dimensional hopping

被引：4

作者：

Stepina, N. P. ^{[1
]}

Valkovskii, V. V. ^{[1
,2
]}

Galperin, Y. M. ^{[3
,4
]}

Smagina, Zh. V. ^{[1
]}

Dvurechenskii, A. V. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JETP LETTERS | 2015年 / 101卷 / 01期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

DISORDERED COMPOUNDS; CONDUCTIVITY; WIRES; POLYANILINE; TRANSPORT; STATES; METAL;

D O I：

10.1134/S0021364015010142

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Parallel chains of germanium quantum dots were grown on a patterned silicon (100) substrate prepared by the combination of nanoimprint lithography and ion irradiation. Strong anisotropy of the conductance between the direction of the chains and the perpendicular one was observed; the current-voltage curves being essentially superlinear. At low bias voltage dependence of the conductance obeys the Arrhenius law indicating one-dimensional (1D) hopping. With increase in the bias this dependence crosses over to G ae exp[-(T (0)/T)(1/2)] explained by a quasi-1D transport involving hopping between nearest neighboring chains.

引用

页码：22 / 26

页数：5

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