Photogalvanic effects in HgTe quantum wells

被引：0
|
作者：
Wittmann, B. [1 ]
Ravash, R. [1 ]
Diehl, H. [1 ]
Danilov, S. N. [1 ]
Kvon, Z. D. [2 ]
Tarasenko, S. A.
Ivchenko, E. L. [3 ]
Mikhailov, N. N. [2 ]
Dvoretsky, S. A. [2 ,3 ]
Prettl, W. [1 ]
Ganichev, S. D. [1 ]
机构：
[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany
[2] Inst Semicond Phys, Novosibirsk, Russia
[3] Ioffe Physico Techn Inst, St Petersburg 194021, Russia
来源：
2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年
关键词：
HgTe quantum wells; circular and linear photogalvanic effects; spintronics;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.
引用
收藏
页码：756 / +
页数：2
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