Epitaxial growth of GeSn layers on (001), (110), and (111) Si and Ge substrates

被引：4

作者：

Nakatsuka, Osamu ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Asano, Takanori ^{[1
]}

Yamaha, Takashi ^{[1
]}

Kurosawa, Masashi ^{[1
,2
]}

Takeuchi, Wakana ^{[1
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Eng, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] JSPS, Chiyoda Ku, Tokyo 1020083, Japan

来源：

SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES | 2014年 / 64卷 / 06期

关键词：

GE1-XSNX LAYERS; SN;

D O I：

10.1149/06406.0793ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have examined the epitaxial growth of Ge1-Snx on Ge(001), Ge(110), Ge(111), and Si(110) substrates and have investigated the crystalline properties of the epitaxial layers. We found that the Sn incorporation into Ge epitaxial layer effectively suppress the formation of stacking fault and twin growth in low temperature molecular beam epitaxy. We also found the strain relaxation of Ge1-Snx layers strongly depends on the residual strain which is dominated on not only the Sn content but also the substrate orientation. We demonstrate that Ge1-x-ySixSny epitaxial layer lattice-matching to Ge substrate exhibits the high thermal stability thanks to small misfit strain to substrate.

引用

页码：793 / 799

页数：7

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